@MastersThesis{Abreu:2006:CaElCé,
author = "Abreu, Ricardo Augusto Santos de",
title = "Caracteriza{\c{c}}{\~a}o el{\'e}trica de c{\'e}lulas solares
de tripla jun{\c{c}}{\~a}o-GaInP/GaAs/Ge",
school = "Instituto Nacional de Pesquisas Espaciais (INPE)",
year = "2006",
address = "S{\~a}o Jos{\'e} dos Campos",
month = "2006-03-24",
keywords = "c{\'e}lula solar, c{\'e}lula solar jun{\c{c}}{\~a}o vertical,
heterojun{\c{c}}{\~o}es, fotocondutividade, dispositivos
semicondutores, solar cell, vertical junction solar cell,
heterojunctions, photoconductivity, semiconductor devices.",
abstract = "C{\'e}lulas solares tripla jun{\c{c}}{\~a}o (TJ) utilizam uma
combina{\c{c}}{\~a}o de materiais semicondutores para capturar
mais eficientemente os f{\'o}tons na faixa de 300nm a 1800nm do
espectro solar. A efici{\^e}ncia m{\'{\i}}nima de
convers{\~a}o AM0 para uma c{\'e}lula de TJ de primeira
gera{\c{c}}{\~a}o para uso espacial {\'e} de 26%. O GaInP, GaAs
e Ge foram escolhidos devido a capacidade coletiva do
espa{\c{c}}amento entre bandas de se ajustar ao espectro solar.
GaInP, com energia de 1,85 eV absorve os f{\'o}tons nas partes
ultravioleta e vis{\'{\i}}vel do espectro solar. GaAs, com
energia de 1,42eV absorve pr{\'o}ximo ao infravermelho e Ge
absorve os f{\'o}tons do infravermelho com energia superior a
0,67eV. Um m{\'e}todo experimental in{\'e}dito foi criado para
determinar diretamente as correntes fotogeradas das
jun{\c{c}}{\~o}es individuais da c{\'e}lula de
tripla-jun{\c{c}}{\~a}o. A grande vantagem desse m{\'e}todo
{\'e} sua simplicidade e sua f{\'a}cil implementa{\c{c}}{\~a}o
em qualquer laborat{\'o}rio com sistema el{\'e}trico de
caracteriza{\c{c}}{\~a}o de c{\'e}lula solar e um simulador
solar. Esse aparato experimental consiste de uma l{\^a}mpada
principal interna do simulador solar de g{\'a}s
multi-halog{\^e}neo de 545W- MHG, e dois pares de l{\^a}mpadas
vermelhas externas ao simulador. Tr{\^e}s curvas I-V s{\~a}o
medidas usando um sistema de aquisi{\c{c}}{\~a}o de dados. A
primeira medida {\'e} obtida usando apenas a l{\^a}mpada MHG; a
segunda curva I-V com um par de l{\^a}mpadas vermelhas ligadas e
a terceira curva {\'e} medida com as quatro l{\^a}mpadas
vermelhas ligadas. O ajuste de todas essas curvas pelo ORIGIN
simultaneamente, n{\~a}o individualmente, permite determinar a
corrente fotogerada das tr{\^e}s jun{\c{c}}{\~o}es, o produto
das correntes de satura{\c{c}}{\~a}o e a resist{\^e}ncia em
s{\'e}rie da c{\'e}lula de TJ. O comportamento da c{\'e}lula em
fun{\c{c}}{\~a}o da temperatura foi analisado empregando essa
nova t{\'e}cnica. Os par{\^a}metros que caracterizam as
c{\'e}lulas foram obtidos, mostrando-se de acordo com os valores
da literatura. ABSTRACT: Triple junction solar cells use a
combination of semiconductor materials to more efficiently capture
photons in the range of 300nm to 1800nm of sun solar spectrum.
Minimum average conversion efficiency AM0 for first generation TJ
solar cell for space use is 26,0%. The GaInP, GaAs and Ge were
select because of their collective ability to match bandgap
energies with the solar spectrum. GaInP, with a bandgap energy of
1,85 eV absorbs photons in the ultraviolet and visible part of the
solar spectra. GaAs (Eg = 1,42V) absorbs near infrared light and
Ge absorbs all the lower photon energies in the infrared that are
above 0,67 eV. A new experimental method was developed for
directly determine the photogenerated current junctions within the
triple junction solar cell. The main advantage of this new
technique is its simplicity and its easy implementation at any
laboratory with an electrical characterization solar cell system
and a solar simulator. The experimental apparatus consists of an
internal main lamp of solar simulator of multi halogen gas, 545W
MHG, and two sets or red PAR lamps external of simulator. Three
illuminated I-V curves are measured using a data acquisition
system. The first measurement is obtained using only the MHG lamp;
the second is with the MHG lamp with an additional set of red PAR
lamp and the third curve is measured with four red lamps turned
on. The fitting of all these curves by ORIGIN simultaneously, not
individually, permit us determine the photogenerated current of
three junctions, the product of saturation currents and serie
resistence of TJ solar cell. The behavior of the cells as a
function of temperature was analysed using this new method. Values
for the parameter that characterize these cells were obtained,
showing a good agreement with already reported values.",
committee = "An, Chen Ying (presidente) and Veissid, Nelson (orientador) and
Beloto, Ant{\^o}nio Fernando and Costa Vaz, Celio",
copyholder = "SID/SCD",
englishtitle = "Electrical characterization of triple junction solar cells -
GAINP/GAAS/GE",
language = "pt",
pages = "185",
ibi = "6qtX3pFwXQZGivnJSY/LiDeN",
url = "http://urlib.net/ibi/6qtX3pFwXQZGivnJSY/LiDeN",
targetfile = "publicacao.pdf",
urlaccessdate = "03 maio 2024"
}